Effect of swift heavy ion irradiations in polycrystalline aluminum nitride

نویسندگان

  • J.-C. Nappé
  • Mourad Benabdesselam
  • Philippe Grosseau
  • Bernard Guilhot
  • M. Benabdesselam
چکیده

Thanks to its high thermal conductivity, aluminum nitride may be a serious candidate as fuel coating for the Gas Fast Reactor. However, its behavior under irradiation is not entirely well understood. In order to catch a glimpse of this behavior, specimens were irradiated with swift heavy ions of different energies then characterised by both thermally stimulated luminescence and optical absorption spectrophotometry. With these techniques, the native defects, as well as those affected by irradiation, were identified: thus, by comparison to the virgin sample, no new defect detectable by these techniques is created by irradiations. Eventually, the fact that these techniques complement each other allowed to understand the effect of irradiation parameters on the defect concentration.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Effect of Thickness on Structural and Morphological Properties of AlN Films Prepared Using Single Ion Beam Sputtering

Aluminum nitride (AlN) thin films have potential applications in microelectronic and optoelectronic devices. In this study, AlN thin films with different thicknesses were deposited on silicon substrate by single ion beam sputtering method. The X-ray diffraction (XRD) spectra revealed that the structure of films with thickness of - nm was amorphous, while the polycrystalline hexagonal AlN with a...

متن کامل

Swift Heavy Ion Irradiation of Pressurized Boron Nitride

Recently, it has been shown that irradiation with swift heavy ions can trigger [1] or also prevent [2] phase transitions in oxides at static high pressure and outside the equilibrium stability field [3]. At GSI, several experiments were conducted in order to probe the influence of applied pressure of up to 25 GPa on the irradiation behaviour of various materials [2, 3]. We decided to study effe...

متن کامل

Preparation and Characterization of Aluminum Nitride Thin Films with the Potential Application in Electro-Acoustic Devices

In this work, aluminum nitride (AlN) thin films with different thicknesses were deposited on quartz and  silicon  substrates  using  single  ion  beam  sputtering  technique.  The  physical  and  chemical properties  of  prepared  films  were  investigated  by  different  characterization  technique.  X-ray diffraction (XRD) spectra revealed that all of the deposited films have an amorphous str...

متن کامل

Fission Tracks Simulated by Swift Heavy Ions at Crustal Temperatures and Pressures

The fission-track dating technique is an important tool to constrain the history of samples from small archaeological specimens to large geological formations. The method is based on analyzing particle tracks produced by spontaneous fission of 238 U nuclei and accumulated over time. In laboratory experiments, fission tracks can be simulated by performing irradiations with energetic heavy ions p...

متن کامل

Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler

Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2017